Strain-balanced GaAs 1−x Bi x /GaN y As 1−y W-type quantum wells for GaAs-based 1.3–1.6 µm lasers

Highly-mismatched alloys constitute a promising approach to extend the operational range of GaAs-based quantum well (QW) lasers to telecom wavelengths. This is challenging using type-I QWs due to the difficulty to incorporate sufficient N or Bi via epitaxial growth. To overcome this, we investigate a novel class of strain-compensated type-II QWs combining electron-confining, tensile strained GaN更多