Feedback Stabilization of a Negative-Capacitance Ferroelectric and its Application to Improve the f T of a MOSFET

IEEE Transactions on Electron Devices(2021)

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摘要
We propose a parallel negative-capacitance field-effect transistor (P-NCFET) structure, in which a ferroelectric operating in its negative-capacitance region is placed in parallel with the gate and source terminals of a MOSFET. The P-NCFET is stabilized by combining careful matching of the ferroelectric with the gate capacitance along with simple feedback realized using current mirrors. The novel ...
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关键词
Capacitance,Logic gates,MOSFET,Iron,Transistors,Transfer functions,Current mirrors
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