Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs

In this work, an analysis of the impact of drain field plate (FP) length on the semi- ON degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. A wafer-level characterization, by means of pulsed stress tests, reveals a faster and more severe decrease of the drain current in the linear region for the samples with longer drain FP. 2-D technology computer-aided design (TCAD...