Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

Ekaterina Kondratyuk,Yury Matveyev,Anastasia Chouprik,Evgeny Gornev,Maksim Zhuk,Roman Kirtaev, Anton Shadrin,Dmitrii Negrov

IEEE Transactions on Electron Devices（2021）

引用 2|浏览6

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摘要

One of the most attractive types of novel nonvolatile memory concepts is resistive random access memory (ReRAM) based on a reversible (“soft”) dielectric breakdown effect. The interest is caused by combining simple architecture with promising performance: excellent scalability, nanosecond speed, long data retention, and low power consumption. However, the commercialization of this type of memory i...

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关键词

Testing,Switches,Periodic structures,Voltage measurement,Logic gates,Switching circuits,Resistance

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