Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits

IEEE Transactions on Electron Devices(2021)

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摘要
A single-crystal islands (SCI) technique using low thermal budget pulse laser process is proposed and demonstrated to fabricate single-crystal silicon islands over amorphous dielectric for monolithic 3-D and back-end-of-line (BEOL) FinFET circuits. By laser recrystallizing mask-defined a-Si islands encapsulated with conformal silicon nitride film, designed single-crystal Si islands can be obtained...
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关键词
Silicon,FinFETs,Grain boundaries,Etching,Transistors,Scanning electron microscopy,Substrates
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