A Quasi-Two-Level Medium-Voltage SiC MOSFET Power Module With Low Loss and Voltage Self-Balance

IEEE Transactions on Power Electronics(2022)

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摘要
High-voltage and fast-switching silicon carbide (SiC) power modules are needed to construct high-voltage and high power-density converters. Stacking multiple low-voltage SiC devices to increase the equivalent blocking voltage shows advantages in on-state resistance, current capacity, and cost over one single high-voltage device. An indirect series-connected SiC MOSFET power module using q...
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关键词
Topology,MOSFET,Silicon carbide,Switches,Multichip modules,Switching loss,Sensors
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