Process Integration of High Aspect Ratio Vias with a Comparison between Co and Ru Metallizations

V. Vega-Gonzalez,D. Montero,J. Versluijs,O. Varela Pedreira,N. Jourdan,H. Puliyalil,B. Chehab, T. Peissker, A. Haider,D. Batuk,G. T. Martinez, J. Geypen,Q. T. Le, N. Bazzazian,N. Heylen,M. van der Veen,Z. El-Mekki, T. Webers, H. Vats, L. Rynders, M. Cupak, J. Uk-Lee, Y. Drissi, L. Halipre,W. Gillijns, A.-L. Charley, P. Verdonck, T. Witters, S. V. Gompel,Y. Kimura,I. Ciofi, B. De Wachter,J. Swerts, E. Grieten,M. Ercken,R. Kim,K. Croes, P. Leray,M. Jaysankar, N. Nagesh, L. Ramakers, G. Murdoch,S. Park,Z. Tokei, E. Dentoni-Litta, N. Horiguchi

2021 IEEE International Interconnect Technology Conference (IITC)（2021）

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摘要

The integration of high aspect-ratio (AR) vias or supervias (SV) with a min CDbottom = 10.5 nm and a max AR = 5.8 is demonstrated, allowing a comparison between ruthenium (Ru) and cobalt (Co) chemical vapor deposition (CVD) metallizations. Ru gave a resistance ~2x higher than Co when a 1.1 nm titanium nitride (TiN) film, realized by atomic layer deposition (ALD), was used as an adhesion...

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关键词

Resistance,Metallization,Ruthenium,Conferences,Atomic layer deposition,Thermal shock,Tin

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