Contact Interface Characterization of Graphene contacted MoS 2 FETs

Vivek Mootheri,Albert Minj,Goutham Arutchelvan,Alessandra Leonhardt,Inge Asselberghs,Marc Heyns,Iuliana Radu,Dennis Lin

2021 IEEE International Interconnect Technology Conference (IITC)（2021）

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摘要

Graphene based 2D electrical contacts have been proposed to mitigate the contact resistance bottleneck in 2D material based transistors. In this work, we present a detailed analysis of Ru-graphene and Ni-graphene contacts to 2.1nm thick CVD MoS2, which show a contact resistance of 9.34 kΩ – μm and 17.1 kΩ – μm, respectively. We report a novel physical characterization strategy to charac...

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关键词

Spectroscopy,MOSFET,Conferences,Graphene,Raman scattering,Contact resistance,Market research

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