The via resistance analysis at ALD-to-PVD TaN transition layer

Youngsoo Yoon,Changhyun Kim,Junki Jang, Kichang Sung,Hoon Kim,Yunki Choi,Jeonghoon Ahn,Wonkyu Han,Woojin Jang,Rakhwan Kim,Dongwoo Shin, Juheon Kim, Youngju Lim, Hyunju Yim, Wonmo Kang, Jongmil Youn

2021 IEEE International Interconnect Technology Conference (IITC)（2021）

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摘要

We demonstrate that when a thin ALD (atomic layer deposition) TaN as a barrier metal is deposited to the Cu interconnect, the upper via resistance is significantly increased. We also exhibit that the abnormal upper via resistance is consistent with the N/Ta increase by nitrogen diffusion. To overcome this issue, we investigate a hybrid TaN (PVD TaN on the top of ALD TaN), which prevents the nitrog...

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关键词

Resistance,Conferences,Atomic layer deposition,Metals,Nitrogen

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