Impact of the Bitcell Topology on the Multiple-Cell Upsets Observed in VLSI Nanoscale SRAMs

This article presents an analysis of the multiple events [and more specifically, multiple-cell upsets (MCUs)] that may occur at successive generations of bulk CMOS static random access memories (SRAMs) operating under harsh conditions, such as in avionics or space. Such MCU distribution is greatly impacted by the bitcell topology, which, in the International Technology Roadmap for Semiconductors (...