Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

IEEE Transactions on Electron Devices(2021)

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摘要
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on 2-D materials. The electrostatics along the electrolyte-gated 2-D-semiconductor stack is treated by solving the Poisson equation, including the site-binding model and the Gouy–Chapman–Stern approach, while the carrier transport is described by the drift-diffusion theory. The proposed model is pro...
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关键词
Integrated circuit modeling,Sensitivity,Semiconductor device modeling,Threshold voltage,Solid modeling,Logic gates,Field effect transistors
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