Excitonic emission dynamics at cryogenic- and above room temperature in high brightness sub-micron fin LED and Lasers

2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID)(2021)

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摘要
A n-ZnO fin - p-GaN UV light-emitting diode (LED) with sub-μm m2 lateral size is presented that exceeds the output power of previous nanoscale light sources by a factor of 1000, generating 1 $\mu m$ Watt to 20 $\mu m$ Watt power. To better understand the origin of the improved efficiency in these nanostructures relative to other nanostructures, we will investigate the collection of electrons and h...
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关键词
light emitting diode,LED,nano LED,nano laser,fin LED,ZnO,GaN
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