Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes

The ability of cubic phase (3C-) silicon carbide (SiC) to grow heteroepitaxially on silicon (Si) substrates (3C-SiC-on-Si) is an enabling feature for cost-effective wide bandgap devices and homogeneous integration with Si devices. In this article, the authors evaluated 3C-SiC-on-Si Schottky barrier contacts by fabricating and testing nonfreestanding lateral Schottky barrier diodes (LSBD). To gain ...