Nonhysteretic Condition in Negative Capacitance Junctionless FETs

Amin Rassekh,Farzan Jazaeri,Jean-Michel Sallese

IEEE Transactions on Electron Devices（2022）

引用 12|浏览3

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摘要

This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness of the ferroelectric layers giving rise to the negative capacitance behavior. The impact of the technological parameters ...

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关键词

Logic gates,Mathematical models,Field effect transistors,Voltage,Ferroelectric materials,Hysteresis,Numerical models

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