SkyBridge-3D-CMOS 2.0: IC Technology for Stacked-Transistor 3D ICs beyond FinFETs

2021 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)(2021)

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摘要
For sub-5nm technology nodes, gate-all-around (GAA) FETs are positioned to replace FinFETs to enable the continued miniaturization of ICs in the future. In this paper, we introduce SkyBridge-3D-CMOS 2.0, a 3D-IC technology featuring integration of stacked vertical GAAFETs and 3D interconnects. It aims to provide an integrated solution to critical technology aspects, especially when scaling to sub-...
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关键词
Performance evaluation,Semiconductor device modeling,Solid modeling,Three-dimensional displays,Manufacturing processes,Tools,FinFETs
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