A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors

Nachiket V. Desai,Harish K. Krishnamurthy,William Lambert,Jingshu Yu,Han Wui Then,Nicolas Butzen,Sheldon Weng,Christopher Schaef,N. Nidhi,Marko Radosavljevic,Johann Rode, Justin Sandford,Kaladhar Radhakrishnan,Krishnan Ravichandran,Bernhard Sell,James W. Tschanz,Vivek De

2021 Symposium on VLSI Circuits（2021）

引用 10|浏览25

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摘要

A 5V-input, high-frequency, high-density (9A/mm ² ) buck converter featuring a low-voltage GaN power transistor (with 5-10× better FoM than Si) with on-die gate clamps, integrated with a CMOS companion die in 4mm × 4mm package, achieves 94.2% peak efficiency for 5V in /1V out at 3MHz switching frequency with a 40nH inductor.

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关键词

switching frequency,power transistor,peak efficiency high-frequency power converter module,package-integrated low-voltage gallium nitride NMOS power transistors,on-die gate clamps,CMOS companion die,inductor,high-density buck converter,voltage 5.0 V,current 32.0 A,size 4.0 mm,frequency 3.0 MHz,efficiency 94.2 percent,voltage 1 V,GaN

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