A study on lower saturation voltage of dual-gate thin-film a-IGZO MOS transistors

Tarun Kumar Agarwal, Aris Siskos,Florian De Roose,Wim Dehaene,Kris Myny,Nikolas Papadopoulos

2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)（2021）

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摘要

This work focuses on an amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) model with lower saturation voltage for dual-gate (DG) TFTs compared to single-gate (SG) TFTs. The addition of a backgate in dual-gate TFTs saturates the drain current at one half of the VDS required for SG devices when front and backgate oxides are matched. This behaviour can be expected for various co...

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关键词

MOSFET,Conferences,Logic gates,Sensor phenomena and characterization,Sensor systems,Thin film transistors,Mathematical model

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