Low-Leakage Kv-Class Gan Vertical P-N Diodes With Non-Destructive Breakdown Enabled By Hydrogen-Plasma Termination With P-Gan Extension

This paper demonstrates low-leakage hydrogen plasma (HP) terminated GaN-on-GaN vertical p-n diodes. The leakage current was decreased by similar to 800 times (at -600 V), and the breakdown voltage was nearly doubled with a p-GaN extension design. The devices showed a non-destructive breakdown voltage of 1.68 kV, a specific on-resistance (R (on)) of 0.40 M omega cm(2), and a Baliga's figure of merit of 7.1 GW cm(-2). These results indicate that HP termination with p-GaN extension is effective in reducing leakage and enhancing the breakdown capability of vertical GaN power diodes.