Low Frequency Noise: A Show Stopper For State-Of-The-Art And Future Si, Ge-Based And Iii-V Technologies

C. Claeys, A. Oliviera,A. Veloso, L. He,K. Takakura,V. Putcha, H. Amimura,E. Simoen

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)（2021）

引用 0|浏览1

暂无评分

摘要

Scaling from FinFETs to horizontal and vertical single or stacked nanowires and nanosheets directly impacts the low frequency noise performance. The processing choice (e.g. gate stack, junction architecture, metal stack) also plays an important role. The noise power spectral density (PSD) of advanced Si, Ge and III-V devices is studied and compared with each other.

查看译文

关键词

stacked nanowires,nanosheets,low frequency noise performance,gate stack,junction architecture,metal stack,noise power spectral density,III-V devices,III-V technologies,FinFET

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要