Re-Consideration Of Influence Of Fluorine On Sio2 And Sixny Reliabilities

In this paper, the influence of Fluorine incorporation into SiO2 and Si nitride (St(x)N(y)) films which are widely used in the nano electronics has been investigated. In the SixNy film, fluorine makes the electron trap level shallower with increasing F dosage. On the other hand, as previously reported in the literatures, an excess fluorine degrades the SiO2 film markedly. Re-considering the control of Fluorine incorporation becomes important for highly reliable devices.