Forming-Free, Ultra-High On-State Current, And Self-Compliance Selector Based On Titanium-Doped Nbox Thin Films

NbO2-based selectors can effectively suppress cross-talk interference between memory cells in the high-density cross-point nonvolatile memory arrays. By doping titanium into the niobium oxide, the Pt/Ti:NbOx/TiN selector device based on insulator-metal transition (IMT) effect presented typical threshold switching (TS) behavior. Compared with the undoped device (UD), the doped device (DD) performed forming-free, ultra-high on-state current and self-compliance properties. Meanwhile, its performances were stable in 1000 consecutive cycles of TS. Subsequently, the mechanism of the device was understood based on oxygen vacancies adjusted by Ti atom. This device provided an approach to drive memory for V-point structure due to the ultra-high on-state current.