Flexible multi-level quasi-volatile memory based on organic vertical transistor

Driven by important megatrends such as cloud computing,artificial intelligence,and the Internet of Things,as a device used to store programs and data in computing systems,memory is struggling to catch up with the explosive growth of data and bandwidth requirements in the system.However,the"storage wall"between non-volatile memory and volatile memory retards the further improvement of modem memory computing systems.Herein,a quasi-volatile transistor memory based on organic polymer/perovskite quantum dot blend was fabricated using the vertical transistor configuration.Contributing to vertical structure and appropriate doping ratio of blend film,the quasi-volatile memory device displayed 1,560 times longer data retention time(＞100 s)with respect to the dynamic random access memory and fast data programming speed(20 μs)in which was far more quickly than that of other organic non-volatile memories to fill the gap between volatile and non-volatile memories.Moreover,the device retention characteristics could be further promoted under the photoelectric synergistic stimulation,which also provided the possibility to reduce electric writing condition.Furthermore,the quasi-volatile memory device showed good electrical performance under bending conditions.This work provides a simple solution to fabricate multi-level quasi-volatile memory,which opens up a whole new avenue of"universal memory"and lays a solid foundation for low power and flexible random access memory devices.