Analysis Of Thickness-Dependent Electron Transport In Magnetron Sputtered Zrn Films By Spectroscopic Ellipsometry

In this work, we deal with a study of the electron-transport behavior of zirconium nitride RF magnetron sputtered films using Zr target in reactive nitrogen ambient. The films were grown on silica-coated silicon substrates at a substrate temperature of 300 degrees C. The growth process was monitored using an in-situ spectral ellipsometer in a spectral range from 245 to 1690 nm. The ellipsometric data were analyzed using a dispersion model based on Drude-Lorentz oscillators. We estimated electron-transport properties at each stage of the deposition process by analysis of the model parameters. The mechanism of the thickness-dependent electron-transport phenomenon of the ZrN films is discussed in this work.