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Optimization of Bump Defect at High-Concentration In-Situ Phosphorus Doped Polysilicon/TEOS Oxide Interface for 3D NAND Flash Memory Application

Dongxue Zhao,Zhiliang Xia,Linchun Wu,Tao Yang,Dongyu Fan,Yuancheng Yang,Lei Liu,Wenxi Zhou,Zongliang Huo

IEEE Journal of the Electron Devices Society（2021）

引用 1|浏览10
关键词
bump defects,phosphorus-doped polysilicon,TEOS,wet processing
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