Rapid Growth of Monolayer MoSe 2 Films for Large‐Area Electronics

The large-scale growth of semiconducting thin films on insulating substrates enables batch fabrication of atomically thin electronic and optoelectronic devices and circuits without film transfer. Here an efficient method to achieve rapid growth of large-area monolayer MoSe2 films based on spin coating of Mo precursor and assisted by NaCl is reported. Uniform monolayer MoSe2 films up to a few inches in size are obtained within a short growth time of 5 min. The as-grown monolayer MoSe2 films are of high quality with large grain size (up to 120 mu m). Arrays of field-effect transistors are fabricated from the MoSe2 films through a photolithographic process; the devices exhibit high carrier mobility of approximate to 27.6 cm(2) V-1 s(-1) and on/off ratios of approximate to 10(5). The findings provide insight into the batch production of uniform thin transition metal dichalcogenide films and promote their large-scale applications.