MoS 2 /graphene Lateral Heterostructure Field Effect Transistors

Daniel S. Schneider,Eros Reato,Leonardo Lucchesi,Zhenyu Wang,Agata Piacetini,Jens Bolten,Damiano Marian,Enrique G. Marin,Aleksandra Radenovic,Zhenxing Wang,Gianluca Fiori,Andras Kis,Giuseppe Iannaccone,Daniel Neumaier,Max C. Lemme

2021 Device Research Conference (DRC)（2021）

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摘要

Integrated logic circuits require transistors that have a sufficiently high mobility, but also a high current on/off ratio. In this respect, two-dimensional (2D) molybdenum disulfide (MoS 2 ) has been demonstrated as a suitable channel material for n-type field-effect transistors (FETs) with high performance. Single-layer graphene (SLG) has been shown to reduce contact resistance in such MoS 2 dev...

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