Electro-optical modulator based on a layered semiconductor crystal structure

An electro-optical modulator has a mono or multi-layered film of 2-dimensional semiconducting material (2D SC) having a layered crystal structure, 101, with electrodes, 102, formed at each side of the semiconducting material. The application of electrical potential to the electrodes and across the two-dimensional semiconducting material modulates the transmittance of light of certain wavelengths as a function of the voltage. The 2-dimensional semi-conducting material consist of a transition metal dichalcogenide, TMDC, (such MoS2, Molybdenum disulfide, MoSe2, Molybdenum diselenide, MoTe2, Molybdenum ditelluride, WS2,Tungsten (IV) sulphide, WSe2, Tungsten (IV) diselenide, WTe2, Tungsten (IV) ditelluride, ZrS2, Zirconium disulphide, HfS2, Hafnium disulphide or TiS2, Titanium disulphide), a transition metal trichalcogenide (such as TiS3, Titanium trisulphide), silicince germanene, black phosphorus, III-VI compounds (such as GaS, Gallium sulphide) or perovskites. One or more modulator may be incorporated into integrated photonic circuits and optical devices. Also disclosed is a method of manufacturing the electro-optical modulator of the invention.