Simulation Analysis of Increase in ON-State Voltage of 4H-SiC Bipolar Devices Due to Single-Shockley-Stacking Faults

Mechanism of increase in the ON-state voltage of 4H-SiC PiN diodes due to the expansion of single-Shockley-stacking faults (1SSFs), so-called bipolar degradation, was investigated by performing a technology computer-aided design (TCAD) simulation. Electrical characteristics in 15-kV class PiN diodes with a 1SSF monolayer in a voltage-blocking layer were calculated while modeling the 1SSF as a quan...