Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances

This article presents a compact model for the drain current and capacitances of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs). The model is valid in the deep and tail states regions of operations, with a smooth transition between the two. The model parameters were extracted independently in the two regions using the unified model and extraction method (UMEM). The subthreshol...