Layout-Induced Strain Study for RF Performance Improvement of 22-Nm UTBB FDSOI PFET
IEEE Transactions on Electron Devices（2021）
Key words
Strain,Silicon germanium,Performance evaluation,Silicon-on-insulator,Radio frequency,Stress,Noise measurement,Finite-element method (FEM),nanobeam electron diffraction (NBED),P-channel field-effect transistor (PFET),SiGe,strain,transmission electron microscopy (TEM),ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FDSOI)
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