Surface activated bonding of Nb-Nb for surperconducting device interconnect
2021 International Conference on Electronics Packaging (ICEP)(2021)
摘要
Deposited Nb wafers were bonded directly by surface activated bonding method at room temperature. In this research, several criteria for bonding has been investigated: Surface roughness should be less then Ra = 1.0 nm, and etching time is 50 s or more.
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关键词
Superconducting devices,Performance evaluation,Radiation effects,Three-dimensional displays,Surface roughness,Etching,Rough surfaces
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