Surface activated bonding of Nb-Nb for surperconducting device interconnect

2021 International Conference on Electronics Packaging (ICEP)(2021)

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摘要
Deposited Nb wafers were bonded directly by surface activated bonding method at room temperature. In this research, several criteria for bonding has been investigated: Surface roughness should be less then Ra = 1.0 nm, and etching time is 50 s or more.
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关键词
Superconducting devices,Performance evaluation,Radiation effects,Three-dimensional displays,Surface roughness,Etching,Rough surfaces
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