Ohmic Contact Characteristics of Silicon Carbide-based MEMS Devices

Chen Wu,Xudong Fang,Zhihong Feng,Qiang Kang,Yuanjie Lv,Yuefei Yan,Zhuangde Jiang

2021 IEEE 16th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)（2021）

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摘要

The stability and reliability of electrical ohmic contacts are the key to the stable operation of silicon carbide power electronic devices in extreme environments. Firstly, the current research status and common problems of SiC ohmic contacts has been analyzed. Secondly, a carrier model for the ohmic contact between metals and SiC based on the tunneling effect is established. By increasing the dop...

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关键词

Scanning electron microscopy,Annealing,Silicon carbide,Metals,Doping,Tunneling,Nickel

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