The Role of Defects on the Performance of Quantum Dot Intermediate Band Solar Cells
IEEE journal of photovoltaics（2021）
Key words
Photovoltaic cells,Gallium arsenide,Electron traps,Temperature measurement,Capacitance measurement,Epitaxial growth,Substrates,Deep level transient spectroscopy (DLTS),intermediate band solar cell (IBSC),metalorganic vapor phase epitaxy (MOVPE) growth,nonradiative recombination,point defects,power conversion efficiency,quantum dots (QDs)
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