6 GHz GaN HEMT Linear Power Amplifier

Hamza. K Husna,D. Nirmal,S Merlin Gilbert Raj,J. Ajayan,L. Arivazhagan,A. S. Augustine Fletcher

2021 3rd International Conference on Signal Processing and Communication (ICPSC)（2021）

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摘要

The design and analysis of GaN HEMT linear power amplifier to operate at 6 GHz frequency is presented in this work. The GaN HEMT with 800 nm gate length, was power matched at the frequency of 6 GHz. The linear model of the GaN HEMT was derived from the scattering parameter data for designing the power amplifier. The power amplifier displayed a power gain of 9 dB and noise figure of 2 dB at 6 GHz f...

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关键词

Noise figure,Power amplifiers,HEMTs,Signal processing,Stability analysis,Microwave oscillators,Wide band gap semiconductors

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