Ultra-Low Switching Loss Triple-Gate controlled IGBT

Tatsunori Sakano,Kazuto Takao,Yoko Iwakaji, Hiroko Itokazu,Tomoko Matsudai

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)（2021）

引用 2|浏览0

暂无评分

摘要

A triple-gate 1.2-kV Si-insulated-gate bipolar transistor (TG-IGBT) is proposed in order to drastically improve both turn-on loss (Eon) and turn-off loss (Eoff) by using a novel gate drive control technique. In this work, we fabricated a 1.2-kV TG-IGBT that achieved 50% and 28% Eon and Eoff reduction, respectively, compared with a conventional single-gate IGBT. This result indicates that it is pos...

查看译文

关键词

Insulated gate bipolar transistors,Integrated circuits,Switching loss,Logic gates,Control systems,Silicon,Delays

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要