Design Optimization of Multiple Stepped Oxide Field Plate Trench MOSFETs with Machine Learning for Ultralow On-resistance

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)(2021)

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摘要
We propose a machine learning approach for power device design that consists of TCAD simulation and line Bayesian optimization. It has the advantage of multivariable optimization of field plate (FP) MOSFETs, and we thus discover an optimal structure for 100-V-class 8-step oxide FP-MOSFET. Compared with gradient FP-MOSFET, 8-step FP-MOSFET reduces the specific on-resistance (RONA) by 20% and power ...
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关键词
Integrated circuits,MOSFET,Machine learning,Logic gates,Linear programming,Power semiconductor devices,Bayes methods
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