Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

We present detailed ON-state gate current characterization of Schottky gate p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes. The threshold voltage is monitored from $10~\mathrm {\mu }\text{s}$ up to 100 s under positive gate bias stress and during recovery. The threshold voltage stability is affected by the balance between hole and electron curren...