Development of ultrasensitive indium oxide layer with high response to NO2 gas in indium gallium zinc oxide stack structure using atomic layer deposition

S.B. Eadi,H.J. Shin, K.W. Song, H.W. Choi,S.H. Kim,H.D. Lee

Materials Letters（2021）

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摘要

•An indium gallium zinc oxide (IGZO) film was deposited in a stack structure.•The IGZO film was used as a sensing layer for NO2 detection.•The sensor exhibited excellent NO2-detection, selectivity, and repeatability.

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关键词

Indium gallium zinc oxide,Atomic layer deposition,Nitrogen dioxide,Annealing,Gas Sensor

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