Static and dynamic oxidation behaviour of silicon carbide at high temperature

Shiyan Chen,Yi Zeng,Xiang Xiong,Huilin Lun,Ziming Ye,Tianxing Jiang,Lingwei Yang,Jun Zhang,Liping Liu,Guolin Wang,Li Jing, Xiangqian Xie,Changhai Yan

Journal of the European Ceramic Society（2021）

引用 12|浏览9

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摘要

•The static and dynamic oxidation of SiC were investigated in air and in plasma wind tunnels, respectively.•The activation energies for static oxidation were approximately ten times higher than the value of dynamic oxidation.•The observed Si-O-C transition layer located at the SiO2/SiC interface after both static and dynamic oxidation.

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关键词

SiC,Plasma wind tunnel,Static oxidation,Dynamic oxidation

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