Corrigendum: “Selection of ion species suited for channeled implantation to be used in multiepitaxial growth for SiC superjunction devices” [Jpn. J. Appl. Phys. 58, 050905 (2019)]
Japanese Journal of Applied Physics（2020）
关键词
sic superjunction devices”,implantation,corrigendum,multiepitaxial growth
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