Dual-Active-Layer Ingazno High-Voltage Thin-Film Transistors

InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 mu m is 406 +/- 17 V while the ON/OFF ratio reaches 10(9) at V-DS = 10 V.