Simultaneous Accessing Of Multiple Sram Subregions Forming Configurable And Automatically Generated Memory Fields

A novel SRAM architecture that simultaneously accesses multiple and non-overlapped memory subregions, located even inside the same memory page, is presented in this work. This new memory architecture is called multi-field SRAM, and the multiple selection of its subregions-referred to as the memory fields-is succeeded using special designed intra-encoders, placed as one for every memory field. The block diagram of the typical SRAM model is extended in order to support the addressing of the multi-field SRAM using a modified crossbar addressing approach. The support of this new memory is based on the automated generation of intra-encoders that are adjacent to the memory fields. A test circuit, consisting of 16 memory fields, is developed in order to prove the correct operation of this new memory. Each memory storage cell uses an 8T model in order to support the crossbar addressing scheme, which is also presented. Finally, the simulation results of the test circuit are shown, verifying the successful and simultaneous multi-field access of the memory.