Impact of O-2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors*
Chinese Physics B(2021)
摘要
The effects of dry O-2 post oxidation annealing (POA) at different temperatures on SiC/SiO2 stacks are comparatively studied in this paper. The results show interface trap density (D (it)) of SiC/SiO2 stacks, leakage current density (J (g)), and time-dependent dielectric breakdown (TDDB) characteristics of the oxide, are affected by POA temperature and are closely correlated. Specifically, D (it), J (g), and inverse median lifetime of TDDB have the same trend against POA temperature, which is instructive for SiC/SiO2 interface quality improvement. Moreover, area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.
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关键词
SiC,O-2 post oxidation annealing,interface traps,MOS
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