Novel Omega-Gate Heterojunction Tunneling Fet With A New Analytical Model

In this paper, a novel Omega-Gate heterojunction tunneling field effect transistor (HTFET) is proposed by decreasing the gate coverage of gate-all-around (GAA) HTFET. Compared with GAA HTFET, Omega-Gate HTFET maximizes the electrostatic gate control while minimizing the device area, and it has a smaller natural length, not scarifying the high driving capability. A new analytical model is proposed for Omega-Gate HTFET. By introducing an overlap coefficient of eta that is based on the Omega-Gate structure, the natural length can be calibrated more accurately. I-V characteristics can be obtained by using the PPA method and tunneling mechanism equations. The model can be verified by Technology Computer Aided Design (TCAD) simulations applying GaAs0.5Sb0.5/In0.53Ga0.47As Omega-Gate HTFET. It is shown that the tunneling rate of Omega-Gate HTFET is five times that of tri-gate HTFET, its natural length can be scaled down a maximum of 38%, and it has an excellent drive capability compared with GAA HTFET.