Scaling Potential Analysis for the CMOS Compatible Ox-RRAM

2021 IEEE International Memory Workshop (IMW)(2021)

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摘要
This paper investigated the scalability potential of Ox-RRAM at advance technology nodes by considering the programing voltage, current and stability factors. The voltage mismatch issue become more serious as the technology become advance. High temperature forming scheme and array architecture optimization could alleviate this issue. The tail bit occurs during reading operation and high temperatur...
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关键词
Electric potential,Temperature,Scalability,Programming,Reliability engineering,Stability analysis,Thermal analysis
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