BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultra-High-Density 2D Electron Gas over 0.8×10 14 /cm 2 by Ferroelectric Polarization

In this work, we report back-end-of-line (BEOL) compatible indium-tin- oxide (ITO) transistors with ferroelectric Hf0.5Zr0.5O2 (HZO) as gate insulator. A tunable high-density two-dimensional (2D) electron gas over 0.8×1014 /cm2 is achieved at the HZO/ITO oxide/oxide interface because of the ferroelectric polarization, which is confirmed by I-V, positive up and negative down (PUND) and Hall measure...