Benchmarking the Performance of Heterogeneous Stacked RRAM with CFETSRAM and MRAM for Deep Neural Network Application Amidst Variation and Noise
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)(2021)
摘要
In this article we demonstrate and compare the performance of 32nm technology node compatible high-K and low-K stacked RRAM with CFET-SRAM and MRAM for binary deep neural network. We have fabricated heterogenous stacked RRAM with Sidoped Al2O3 and Ta2O5 as stacked layer for synaptic memory application. The device demonstrated an exorbitant on/off ratio ~ 4.2 x 103 with an ultra-low variation (σ ~ ...
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关键词
Bipolar resistive switching,ReRAM,synaptic simulation,recognition accuracy,neural network
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