FinFET Plus: A Scalable FinFET Architecture with 3D Air-Gap and Air-Spacer Toward the 3nm Generation and Beyond

C. K. Chiang, H. Pai, J. L. Lin, J. K. Chang,M. Y. Lee,E. R. Hsieh, K. S. Li, G. L. Luo,Osbert Cheng,S. S. Chung

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)(2021)

引用 5|浏览0
暂无评分
摘要
A new improvement of FinFET has been demonstrated in the extension of the Moore’s Law toward N3 technology and beyond. Instead of conventional STI, the approach is to use air-trench-isolation (ATI) between fins such that, in the width direction, inter-fin spaces with air-gap in the active region become scalable. The scalable ATI FinFET exhibits better DC and RF performance. Results show that the p...
更多
查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要