Gate Drive Optimization Framework with Electro-thermal Model of GaN HEMTs for High-Frequency DC-DC Converters

The gate drive circuitry design of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) is critical to power converter efficiency. The high switching frequency achievable by GaN means the gate drive circuitry must be designed to minimize parasitic inductance to prevent voltage overshoot. Additionally, the output current and characteristic capacitance of GaN transistors is dependent of th...