TCAD-Based Investigation of Statistical Variability Immunity in U-Channel FDSOI n-MOSFET for Sub-7-nm Technology

IEEE Transactions on Electron Devices（2021）

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摘要

In this article, the impact of random fluctuation sources, such as metal gate granularity (MGG), line edge roughness (LER), and random dopant fluctuations (RDFs), are numerically studied for U-shaped n-channel fully depleted silicon on insulator (FDSOI) MOSFET (U-SOIFET) over conventional n-channel FDSOI MOSFET (C-SOIFET) for 7-nm technology node. This article reports that improved short-channel e...

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关键词

Logic gates,Silicon-on-insulator,Metals,Threshold voltage,Solid modeling,Scattering,Correlation

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